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Data Sheet BTS650P
Smart Highside High Current Power Switch
Features
* Overload protection * Current limitation * Short circuit protection * Over temperature protection * Over voltage protection (including load dump) * Clamp of negative voltage at output * Fast deenergizing of inductive loads 1) * Low ohmic inverse current operation * Reversave (Reverse battery protection) * Diagnostic feedback with load current sense * Open load detection via current sense * Loss of Vbb protection 2) * Electrostatic discharge (ESD) protection
Reversave
Vbb(AZ) 62 VON(CL) 42 Vbb(on) 5.0 ... 34 RON IL(ISO) IL(SC) IL : IIS V V V
Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio
6.0 m 70 A 130 A 14 000
TO-220-7
* Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads * Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads * Replaces electromechanical relays, fuses and discrete circuits
Application
7 1
7
Standard
SMD
1
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
4 & Tab
Voltage source Overvoltage protection Current limit Gate protection
OUT R bb + V bb
1,2,6,7
IL
Voltage sensor
Charge pump Level shifter Rectifier
Limit for unclamped ind. loads Output Voltage detection
Current Sense Load
3
IN
ESD
Logic
I IN
Temperature sensor I IS
IS
PROFET
Load GND
VIN V IS
Logic GND
5
R IS
1
)
2)
With additional external diode. Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1of 16
2003-Oct-01
Data Sheet BTS650P
Pin 1 2 3 4 5 6 7 Symbol OUT OUT IN Vbb IS OUT OUT O O I Function Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with 3 each other especially in high current applications. ) Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with each other especially in high current applications. 3) Input; has an internal pull up; activates the power switch in case of short to ground Supply voltage; positive power supply voltage; tab and pin 4 are internally 4 shorted; in high current applications use the tab ). Sense Output; Diagnostic feedback; provides a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with each other especially in high current applications. 3) Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with each other especially in high current applications. 3)
+
S O O
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (over voltage protection see page 4) Supply voltage for short circuit protection, Tj,start =-40 ...+150C: (see diagram on page 10) Load current (short circuit current, see page 5) Load dump protection VLoadDump = VA + Vs, VA = 13.5 V RI5) = 2 , RL = 0.54 , td = 200 ms, IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const., IL = 20 A, ZL = 7.5 mH, 0 , see diagrams on page 10 Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
Symbol Vbb Vbb IL VLoad dump6) Tj Tstg Ptot EAS VESD IIN IIS
Values 42 34 self-limited 75 -40 ...+150 -55 ...+150 170 1.5 4 +15 , -250 +15 , -250
Unit V V A V C W J kV mA
Current through input pin (DC) Current through current sense status pin (DC)
see internal circuit diagrams on page 8 and 9
3)
4)
5) 6)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Otherwise add up to 0.7 m (depending on used length of the pin) to the RON if the pin is used instead of the tab. RI = internal resistance of the load dump test pulse generator. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
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Page 2
2003-Oct-01
Data Sheet BTS650P Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol min ---7 chip - case: RthJC ) junction - ambient (free air): RthJA SMD version, device on PCB 8):
Values typ max -- 0.75 60 -33 40
Unit K/W
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,2,6,7, see measurement circuit page 7) IL = 20 A, Tj = 25 C: RON VIN = 0, IL = 20 A, Tj = 150 C: IL = 90 A, Tj = 150 C: Vbb = 6V Nominal load current 10) (Tab to pins 1, 2, 6, 7) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 C 11) Nominal load current 10), device on PCB 8) TA = 85 C, Tj 150 C VON 0.5 V, Maximum load current in resistive range (Tab to pins 1, 2, 6, 7) VON = 1.8 V, Tc = 25 C: see diagram on page 13 VON = 1.8 V, Tc = 150 C: 12) Turn-on time IIN to 90% VOUT: to 10% VOUT: Turn-off time IIN RL = 1 , Tj =-40...+150C Slew rate on 12) (10 to 30% VOUT ) RL = 1 , TJ = 25 C Slew rate off 12) (70 to 40% VOUT ) RL = 1 , TJ = 25 C
9
--
), IL = 20 A, Tj = 150 C:
RON(Static) IL(ISO)
-55
4.4 7.9 -10 70
6.0 10.5 10.7 17 --
m
A
IL(NOM) IL(Max) ton toff dV/dton -dV/dtoff
13.6 250 150 100 30 ---
17 ----0.7 1.1
---420 110 ---
A A s
V/s V/s
7) 8
Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. 9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 C. 10) not subject to production test, specified by design 11) TJ is about 105C under these conditions. 12) See timing diagram on page 14. )
Infineon Technologies AG
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2003-Oct-01
Data Sheet BTS650P
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Inverse Load Current Operation On-state resistance (Pins 1, 2, 6, 7 to pin 4) VbIN = 12 V, IL = - 20 A Tj = 25 C: RON(inv) see diagram on page 10 Tj = 150 C: Nominal inverse load current (Pins 1, 2, 6, 7 to Tab) IL(inv) 11 VON = -0.5 V, Tc = 85 C -VON Drain-source diode voltage (Vout > Vbb) IL = - 20 A, IIN = 0, Tj = +150C Operating Parameters Operating voltage (VIN = 0V) 13) 14 Under voltage shutdown ) Under voltage start of charge pump see diagram page 15 Over voltage protection 15) Tj =-40C: Ibb = 15 mA Tj = 25...+150C: Standby current Tj =-40...+25C: IIN = 0 Tj = 150C: Vbb(on) VbIN(u) VbIN(ucp) VZ,IN Ibb(off)
-55 --
4.4 7.9 70 0.6
6.0 10.5 ---
m A V
5.0 1.5 3.0 60 62 ---
-3.0 4.5 -66 15 25
34 4.5 6.0 --25 50
V V V V A
) If the device is turned on before a V -decrease, the operating voltage range is extended down to VbIN(u). bb For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit. 14) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT Vbb - 3 V. 15) See also VON(CL) in circuit diagram on page 9.
13
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2003-Oct-01
Data Sheet BTS650P
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Protection Functions 16) Short circuit current limit (Tab to pins 1, 2, 6, 7) VON = 12 V, time until shutdown max. 350 s Tc =-40C: Tc =25C: Tc =+150C: Short circuit shutdown delay after input current positive slope, VON > VON(SC)
min. value valid only if input "off-signal" time exceeds 30 s
IL(SC) IL(SC) IL(SC) td(SC)
--65 80 14
110 130 115 -16.5
-180 -350 20
A
s V
Output clamp 17) (inductive load switch off)
IL= 40 mA: -VOUT(CL)
see diagram Ind. and overvolt. output clamp page 8
Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. over voltage) IL= 40 mA Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7)
VON(CL) VON(SC) Tjt
39 -150 --
42 6 -10
47 ----
V V C K
Thermal overload trip temperature Thermal hysteresis
Tjt
Reverse Battery Reverse battery voltage 18) -Vbb On-state resistance (Pins 1 ,2 ,6 ,7 to pin 4) Tj = 25 C: RON(rev) Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 k Tj = 150 C: Integrated resistor in Vbb line Rbb
----
-5.4 8.9 120
16 7.0 12.3 --
V m
16
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off. 18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9.
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2003-Oct-01
Data Sheet BTS650P
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Diagnostic Characteristics Current sense ratio, static on-condition, kILIS = IL : IIS,19 VON < 1.5 V ), VIS 4.0 V see diagram on page 12
IL = 90 A,Tj =-40C: kILIS Tj =25C: Tj =150C: IL = 20 A,Tj =-40C: Tj =25C: Tj =150C: IL = 10 A,Tj =-40C: Tj =25C: Tj =150C: IL = 4 A,Tj =-40C: Tj =25C: Tj =150C: IIS,lim IIN = 0: IIS(LL)
12 500 12 500 11 500 12 500 12 000 11 500 12 500 11 500 11 500 11 000 11 000 11 200 6.5 --60 62 --
14 200 13 700 13 000 14 500 14 000 13 400 15 000 14 300 13 500 18 000 15 400 14 000 --2 -66 --
16 000 16 000 14 500 17 500 16 500 15 000 19 000 17 500 15 500 28 500 22 000 19 000 -0.5 65 --500 V s mA A
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads): Sense current saturation Current sense leakage current
VIN = 0, IL 0: IIS(LH) Current sense over voltage protection Tj =-40C: VZ,IS Tj = 25...+150C: Ibb = 15 mA 20) Current sense settling time ts(IS) Input Input and operating current (see diagram page 13) IIN(on)
IN grounded (VIN = 0)
---
0.8 --
1.5 80
mA A
Input current for turn-off 21)
IIN(off)
19)
If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 20) not subject to production test, specified by design 21) We recommend the resistance between IN and GND to be less than 0.5 k for turn-on and more than 500k for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb.
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2003-Oct-01
Data Sheet BTS650P Truth Table
Input current level Normal operation Very high load current Currentlimitation Short circuit to GND Over temperature Short circuit to Vbb Open load Negative output voltage clamp Inverse load current L H H H L H L H L H L H L L H Output level L H H H L L L L H H 23 Z) H L H H Current Sense IIS 0 nominal IIS, lim 0 0 0 0 0 0 22 =IL / kilis, up to IIS=IIS,lim up to VON=VON(Fold back) IIS no longer proportional to IL VON > VON(Fold back) if VON>VON(SC), shutdown will occur
L = "Low" Level; H = "High" Level Over temperature reset by cooling: Tj < Tjt (see diagram on page 15) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
Terms
I bb VbIN 4 Vbb IL V bb RIN V
IN
RON measurement layout
VON OUT
l 5.5mm
3
IN PROFET IS 5
1,2,6,7
I IN
VbIS V IS
I IS DS R IS
Vbb force
VOUT
Out Force Sense contacts contacts (both out pins parallel)
Typical RON for SMD version is about 0.2 m less than straight leads due to l 2 mm
Two or more devices can easily be connected in parallel to increase load current capability. ) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. ) Power Transistor "OFF", potential defined by external impedance.
22 23
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2003-Oct-01
Data Sheet BTS650P
Current sense status output
V bb
Input circuit (ESD protection)
Vbb
R bb
ZD
V
Z,IS
V V bIN
ZD
R bb
Z,IN
IS
IN I
IN
IIS R
IS
VIS
V IN
When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 66 V (typ).
VZ,IS = 66 V (typ.), RIS = 1 k nominal (or 1 k /n, if n devices are connected in parallel). IS = IL/kilis can be driven only by the internal circuit as long as Vout - VIS > 5 V. If you want measure load currents up to IL(M), RIS Vbb - 5 V . should be less than IL(M) / Kilis Note: For large values of RIS the voltage VIS can reach almost Vbb. See also over voltage protection. If you don't use the current sense output in your application, you can leave it open.
Short circuit detection
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...350 s).
+ Vbb
Inductive and over voltage output clamp
+ Vbb VZ1 VON
VON
VZG OUT
OUT Logic unit Short circuit detection
DS IS
PROFET
VOUT
VON is clamped to VON(Cl) = 42 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -19 V typ. via VZG. With DS, VOUT is clamped to Vbb VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET. In case of a floating ground with a potential higher than 19V referring to the OUT - potential the device will switch on, if diode DS is not used.
Infineon Technologies AG
Page 8
2003-Oct-01
Data Sheet BTS650P
Over voltage protection of logic part
+ Vbb V R IN
Z,IN
Vbb disconnect with energized inductive load
Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA.
V
Z,IS
R bb
IN
Logic
V OUT
Version a:
V
IS
PROFET
RV
Signal GND
bb IN
V
R IS
V Z,VIS
bb OUT
PROFET
Rbb = 120 typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 k nominal. Note that when over voltage exceeds 71 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used.
IS
V ZL
Reverse battery protection
- Vbb
R bb
Version b:
V
IN OUT
bb IN
Vbb PROFET OUT
R IN
Logic
IS
Power Transistor
IS
DS RIS RV
Power GND
RL
V Zb
D
Signal GND
RV 1 k, RIS = 1 k nominal. Add RIN for reverse battery protection in applications with Vbb above 16 V18); recommended value: 1 1 1 0.1A + + = if DS is not used (or RIN RIS RV |Vbb| - 12V 1 0.1A = if DS is used). RIN |Vbb| - 12V To minimize power dissipation at reverse battery operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV.
Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a necessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit:
V
bb IN
Vbb PROFET OUT
RL
IS
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Page 9
2003-Oct-01
Data Sheet BTS650P
Inverse load current operation
Vbb
Maximum allowable load inductance for a single switch off
L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0 L [H]
V bb
+ IN
- IL
PROFET IS OUT
1000000
V OUT +
-
V IN V IS
IIS R IS
-
100000
10000
The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), this power dissipation is decreased to the much lower value RON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible!
1000
100
10
1 1A 10 A 100 A 1000 A
IL [A]
Inductive load switch-off energy dissipation
E bb E AS V V bb ELoad bb i L(t) IN PROFET IS I IN ZL OUT L RL EL
Externally adjustable current limit
If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by IS*RIS . After a delay time defined by RV*CV T1 will be reset. The device is turned on again, the short circuit current is defined by IL(SC) and the device is shut down after td(SC) with latch function.
Vbb
{
RIS
ER
Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : IL* L EAS= (V + |VOUT(CL)|) 2*RL bb
IN Signal
RV
2
IN
V bb
PROFET
OUT
IS
Rload
T1
Signal GND
CV
T2
ln (1+ |V
IL*RL
R IS
Power GND
OUT(CL)|
)
Infineon Technologies AG
Page 10
2003-Oct-01
Data Sheet BTS650P
Options Overview Type BTS 6510 550P 555 650P
X X X X X X25) X 25 X) X X X25) X X X X
Over temperature protection with hysteresis Tj >150 C, latch function24) Tj >150 C, with auto-restart on cooling Short circuit to GND protection
with over temperature shutdown switches off when VON>6 V typ. (when first turned on after approx. 180 s)
Over voltage shutdown Output negative voltage transient limit
to Vbb - VON(CL) to VOUT = -19 V typ
) Latch except when V -V bb OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 25) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
24
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2003-Oct-01
Data Sheet BTS650P
Characteristics
Current sense versus load current: IIS = f(IL), TJ= -40 ... +150 C
7 6 5 max 4 min 3 14000 2 1 0 0 20 40 60 80 12000 10000 0 20 40 60 80 min 16000 typ
Current sense ratio: IIS = f(IL), TJ= 25 C
22000 20000 18000 max
IIS [mA] IL [A] Current sense ratio: KILIS = f(IL),TJ = -40C kilis
30000 28000 26000 24000 22000
kILIS IL [A] Current sense ratio: KILIS = f(IL),TJ = 150C
22000 20000 18000 16000
20000 18000 16000 14000 12000 10000 0 20 40 60 80 min max typ 12000 14000
max
typ min 10000 0 20 40 60 80
IL [A]
kilis IL [A]
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Page 12
2003-Oct-01
Data Sheet BTS650P
Typ. current limitation characteristic IL = f (VON, Tj ) IL [A]
450 400 350 300 250 200
TJ = 25C VON > VON(SC) only for t < td(SC) (otherwise immediate shutdown)
Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA]
1.6 1.4 1.2 1.0 0.8 0.6 0.4
TJ = - 40C TJ = 150C
150 100 50 0 0 VON(FB) 5 10 15 20
0.2 0 0 20 40 60 80
VbIN [V]
VON [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance RON = f (Vbb, Tj ); IL = 20 A; VIN = 0 RON [mOhm]
14 12 10 8 6 25C 4 2 0 0 5 10 15 40
Vbb [V]
static dynamic
Tj = 150C 85C
-40C
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2003-Oct-01
Data Sheet BTS650P
Timing diagrams
Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2c: Switching an inductive load:
IIN
IIN
VOUT
90% t on dV/dton 10% t off
dV/dtoff
VOUT
IL
tslc(IS)
t slc(IS)
IL
Load 1
Load 2
IIS
IIS
tson(IS) t soff(IS) t t
The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 3d: Short circuit: shut down by short circuit detection, reset by IIN = 0. Figure 2b: Switching motors and lamps:
IIN IIN IL IL(SCp) VOUT td(SC)
IIL IIS VOUT>>0 VOUT=0 IIS
t
t
Sense current saturation can occur at very high inrush currents (see IIS,lim on page 6).
Shut down remains latched until next reset via input.
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2003-Oct-01
Data Sheet BTS650P
Figure 4e: Over temperature Reset if TjIIN
IIS
VOUT
Auto Restart
Tj
t
Figure 6f: Under voltage restart of charge pump, over voltage clamp
VOUT
VIN = 0
6
4
dynamic, short Undervoltage not below VbIN(u)
VON(CL)
2
IIN = 0
V ON(CL)
0 0 VbIN(u) VbIN(ucp)
Infineon Technologies AG
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2003-Oct-01
Data Sheet BTS650P
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please!
Package and Ordering Code
All dimensions in mm
Standard: TO-220-7-3
BTS650P
Ordering code Q67060-S6308-A002
The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
SMD: TO220-7-180
BTS650P E3180A T&R:
Ordering code Q67060-S6308-A004
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Footprint:
10.8 9.4
16.15
4.6 0.47 0.8 8.42
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2003-Oct-01

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